DESIGN AND ANALYSIS OF DOUBLE-GATE MOSFETS FOR ULTRA-LOW POWER RADIO FREQUENCY IDENTIFICATION (RFID): DEVICE AND CIRCUIT CO-DESIGN

Design and Analysis of Double-Gate MOSFETs for Ultra-Low Power Radio Frequency Identification (RFID): Device and Circuit Co-Design

Recently, double-gate MOSFETs (DGMOSFETs) have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS.However, DGMOSFETs for LADLE subthreshold circuit design have not been much explored in comparison to those for strong inversion-based design.In

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Extended dark matter EFT

Abstract Conventional approaches to describe dark matter phenomenology at collider and (in)direct detection experiments in the form of dark matter effective field theory or simplified models suffer in general from drawbacks regarding validity at high energies and/or generality, limiting their applicability.In order to avoid these shortcomings, we p

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